I'm using the glossaries package to create a list of symbols and a list of abbreviations, but I am encountering two issues:
- The list of symbols produced is in a strange order (see image below) i.e. $/mathcal{E}$, greek lowercase, greek uppercase, greek lowercase with subscripts, latin uppercase, latin lowercase (not shown). Ideally these would be alphabetical latin (with \mathcal{E} included with E), then alphabetical greek, but I'll settle for anything that makes sense.
When I use more than one glossary item containing \mathcal{E} e.g. \gls{efield} ($/mathcal{E}$) and \gls{EMT1} ($\mathcal{E}_{MT1}$), the glossary does not compile and I get an error message:
! Undefined control sequence. \GenericError ... #4 \errhelp \@err@ ... l.37 \printnoidxglossary[type=los] The control sequence at the end of the top line of your error message was never \def'ed. If you have misspelled it (e.g., `\hobx'), type `I' and the correct spelling (e.g., `I\hbox'). Otherwise just continue, and I'll forget about whatever was undefined.which is why \gls{EMT1} and other terms are hidden with a % in the document. I understand the easy solution is to not use \mathcal, but its the way to get the symbol I require.
The list of symbols produced is:
The document code is (for simplicity the list of abbreviations is left out):
\documentclass[12pt,a4paper]{article}
\usepackage{amssymb}
\usepackage{amsmath}
\usepackage{siunitx}
\usepackage{gensymb}
\usepackage[top=2cm,bottom=2.4cm, inner=4cm, outer=2.5cm]{geometry}
\usepackage[nogroupskip,nonumberlist,style=super]{glossaries}
\makenoidxglossaries
\newglossary*{los}{List of Symbols}
\loadglsentries[los]{los}
\begin{document}
\addcontentsline{toc}{section}{List of Symbols}
\printnoidxglossary[type=los]
\section{other}
\subsection{glossary stuff}
\gls{phi}
\gls{L0}
\gls{Delta}
\gls{ecm}
\gls{q}
\gls{ND}
\gls{phibn}
\gls{ly}
\gls{h}
\gls{permittivity}
\gls{relativepermittivity}
\gls{V}
\gls{x}
\gls{y}
\gls{z}
\gls{phin}
\gls{phibi}
\gls{WD}
\gls{efield}
%\gls{emaxthin}
%\gls{emax}
\gls{phiIFL}
\gls{vbr}
%\gls{ebr}
\gls{j}
\gls{richardsonconstant}
\gls{T}
\gls{k}
\gls{dn}
\gls{n}
\gls{NC}
\gls{efn}
\gls{zs}
\gls{I}
\gls{Itot}
\gls{a1}
\gls{a2}
\gls{Isheet}
\gls{Aeff}
\gls{phibeff}
\gls{Iline}
%\gls{EMT1}
%\gls{EMT2}
%\gls{EMTS}
\end{document}
The code loads the list of symbols (los.tex) which is below:
\newglossaryentry{ec}
{type=los,
name={$E_C$},
description={Conduction Band Minimum (eV)}
}
\newglossaryentry{L0}
{type=los,
name={$L_0$},
description={Width of Inhomogeneity/low barrier region (nm)}
}
\newglossaryentry{Delta}
{type=los,
name={$\Delta$},
description={Difference between the mean barrier height and the barrier height of the inhomogeneity/low barrier region (V)}
}
\newglossaryentry{ecm}
{type=los,
name={$E_{CM}$},
description={Maximum of $E_C$ beneath the centre of the inhomogeneity/LBR (eV)}
}
\newglossaryentry{phi}
{type=los,
name={$\phi$},
description={Potential (V)}
}
\newglossaryentry{q}
{type=los,
name={$q$},
description={Fundamental charge (C)}
}
\newglossaryentry{ND}
{type=los,
name={$N_D$},
description={ ($\text{cm}^{-3}$)}
}
\newglossaryentry{phibn}
{type=los,
name={$\phi_{Bn}$},
description={Schottky barrier height between a metal and $n$-type semiconductor (V)}
}
\newglossaryentry{ly}
{type=los,
name={$L_y$},
description={Length of the dipole sheet inhomogeneity (nm)}
}
\newglossaryentry{h}
{type=los,
name={$H$},
description={Semiconductor thickness in a Schottky diode (nm)}
}
\newglossaryentry{permittivity}
{type=los,
name={$\epsilon_0$},
description={Permittivity of free space ($8.85 \times 10^{-14}$ (F/cm)}
}
\newglossaryentry{relativepermittivity}
{type=los,
name={$\epsilon_s$},
description={Relative permittivity of the semiconductor}
}
\newglossaryentry{V}
{type=los,
name={$V$},
description={Applied voltage (V)}
}
\newglossaryentry{x}
{type=los,
name={$x$},
description={Distance in the $x$-direction (cm)}
}
\newglossaryentry{y}
{type=los,
name={$y$},
description={Distance in the $y$-direction (cm)}
}
\newglossaryentry{z}
{type=los,
name={$z$},
description={Distance in the $z$-direction (cm)}
}
\newglossaryentry{phin}
{type=los,
name={$\phi_n$},
description={Fermi potential from the conduction band edge in an $n$-type semiconductor $(E_C - E_F)/q$ (V)}
}
\newglossaryentry{phibi}
{type=los,
name={$\phi_{bi}$},
description={Built-in potential of a Schottky junction (V)}
}
\newglossaryentry{WD}
{type=los,
name={$W_D$},
description={Depletion width of a Schottky junction (nm)}
}
\newglossaryentry{efield}
{type=los,
name={$\mathcal{E}$},
description={Electric field (V/cm)}
}
\newglossaryentry{emaxthin}
{type=los,
name={$\mathcal{E}_{MT}$},
description={Maximum electric field in a fully depleted thin-film Schottky diode (V/cm)}
}
\newglossaryentry{emax}
{type=los,
name={$\mathcal{E}_{M}$},
description={Maximum electric field in a Schottky diode under the standard depletion approximation (V/cm)}
}
\newglossaryentry{phiIFL}
{type=los,
name={$\phi_{IFL}$},
description={Potential reduction in barrier height due to image force lowering (V)}
}
\newglossaryentry{vbr}
{type=los,
name={$V_{BR}$},
description={Breakdown voltage of a Schottky diode (V)}
}
\newglossaryentry{ebr}
{type=los,
name={$\mathcal{E}_{BR}$},
description={Breakdown electric field of a Schottky diode (V/cm)}
}
\newglossaryentry{j}
{type=los,
name={$J$},
description={Current density (A $\text{cm}^{-2}$)}
}
\newglossaryentry{richardsonconstant}
{type=los,
name={$A^*$},
description={Richardson Constant (A $\text{cm}^{-2} K^{-2}$)}
}
\newglossaryentry{T}
{type=los,
name={$T$},
description={Temperature (K)}
}
\newglossaryentry{k}
{type=los,
name={$k$},
description={Boltzmann constant $= 1.38 \times 10^{-23}$ (J/K)}
}
\newglossaryentry{dn}
{type=los,
name={$D_n$},
description={Diffusion coefficient for electrons ($\text{cm}^{2} s^{-1}$}
}
\newglossaryentry{n}
{type=los,
name={$n$},
description={Free electron concentration ($\text{cm}^{-3}$)}
}
\newglossaryentry{NC}
{type=los,
name={$N_C$},
description={Effective density of states in the conduction band ($\text{cm}^{-3}$)}
}
\newglossaryentry{efn}
{type=los,
name={$E_{Fn}$},
description={Fermi energy in an $n$-type semiconductor (eV)}
}
\newglossaryentry{zs}
{type=los,
name={$z_s$},
description={Saddle point position (cm)}
}
\newglossaryentry{I}
{type=los,
name={$I$},
description={Current (A)}
}
\newglossaryentry{Itot}
{type=los,
name={$I_{tot}$},
description={Total current (A)}
}
\newglossaryentry{a1}
{type=los,
name={$A_1$},
description={Area of Schottky barrier region with barrier height $\phi^0_{Bn}$ ($\text{cm}^2$)}
}
\newglossaryentry{a2}
{type=los,
name={$A_2$},
description={Area of Schottky barrier region with barrier height $\phi^0_{Bn}-\Delta$ ($\text{cm}^2$)}
}
\newglossaryentry{Isheet}
{type=los,
name={$I_{sheet}$},
description={Current through the low barrier sheet region of the dipole sheet Schottky diode model (A)}
}
\newglossaryentry{Aeff}
{type=los,
name={$A_{eff}$},
description={The effective area of the low barrier region ($\text{cm}^2$)}
}
\newglossaryentry{phibeff}
{type=los,
name={$\phi_{B,eff}$},
description={The effective barrier height of the low barrier region}
}
\newglossaryentry{Iline}
{type=los,
name={$I_{line}$},
description={Current through the low barrier sheet region of the dipole line Schottky diode model (A)}
}
\newglossaryentry{EMT1}
{type=los,
name={$\mathcal{E}_{MT1}$},
description={Maximum electric field in the region of the Schottky diode with barrier height $\phi^0_{Bn}$ (V/cm)}
}
\newglossaryentry{EMT2}
{type=los,
name={$\mathcal{E}_{MT2}$},
description={Maximum electric field in the region of the Schottky diode with barrier height $\phi^0_{Bn}-\Delta$ in the absence of a saddle point (V/cm)}
}
\newglossaryentry{EMTS}
{type=los,
name={$\mathcal{E}_{MTS}$},
description={Maximum electric field in the region of the Schottky diode with barrier height $\phi^0_{Bn}-\Delta$ in the presence of a saddle point (V/cm)}
}
Any ideas???
Cheers,
Josh
sort=key to tell the package how the non-alphabetical things are sorted. As in\newglossaryentry{efield} {type=los, name={$\mathcal{E}$}, description={Electric field (V/cm)}, sort=Electric field, }